• 论文 •

### 半导体器件电离辐照损伤效应模拟的数值算法及应用

1. 1 LSEC, 中国科学院数学与系统科学研究院计算数学研究所, 国家数学与交叉科学中心, 北京 100190;
2 四川师范大学数学科学学院, 成都 610066
• 收稿日期:2020-04-01 出版日期:2020-06-15 发布日期:2020-06-15
• 通讯作者: 李鸿亮,Email:lihongliang@mtrc.ac.cn;卢本卓,Email:bzlu@lsec.cc.ac.cn.
• 基金资助:

科学挑战专题（TZ201603），国家重点研发计划（2016YFB0201304），NSFC（11771435）.

Ma Zhaocan, Xu Jingjie, Lu Benzhuo, Li Hongliang. NUMERICAL ALGORITHM AND APPLICATION IN SIMULATION OF RADIATION DAMAGE EFFECTS ON SEMICONDUCTOR DEVICES[J]. Journal of Numerical Methods and Computer Applications, 2020, 41(2): 105-120.

### NUMERICAL ALGORITHM AND APPLICATION IN SIMULATION OF RADIATION DAMAGE EFFECTS ON SEMICONDUCTOR DEVICES

Ma Zhaocan1, Xu Jingjie1, Lu Benzhuo1, Li Hongliang2

1. 1 LSEC, Institute of Computational Mathematics, Academy of Mathematics and Systems Science, National Center for Mathematics and Interdisciplinary Sciences, Chinese Academy of Sciences, Beijing 100190, China;
2 Department of Mathematics, Sichuan Normal University, Chengdu 610066, China
• Received:2020-04-01 Online:2020-06-15 Published:2020-06-15

In this paper, a series of algorithms for quantitative physical model of ionization damage effects on semiconductor devices are developed, including finite element method, implicit time integration and decoupling iterative algorithms for nonlinear systems. The algorithms are shown to be effective to deal with the model complexities, including multi-physical coupling, nonlinear reaction system and stiff matrix solving. Based on the three-dimensional parallel finite element platform (PHG), these methods have been implemented into our simulation solver, TIDSim, which is designed for simulating ionizing radiation effects on semiconductor devices. Ionization radiation damage simulations of silicon devices were performed for typical field effect transistors NMOS, bipolar transistors GLPNP. The numerical simulation results are in well agreement with the experimental data of device irradiation.

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