This paper is aimed to study the radiation effects of pulsed neutrons in silicon bipolar junction transistor (BJT) according to published experimental data on 2N2222. Firstly, a TCAD method based on continuity hypothesis to simulate the radiation effects of pulsed neutrons in silicon BJT is introduced. Pulsed neutron radiation induced defect evolution and transient response can be calculated by solving continuity equations for defects and carriers. The utilized physical models, defect categories, defect reactions, parameters of reactions and realizing processes in TCAD are presented. Secondly, the radiation effects of pulsed neutron radiation in a traditional BJT 2N2222 are simulated. The calculated base current and collector current after neutron radiation agree well with experimental values in reference, which suggests the proposed TCAD simulation is reliable.
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