The ionizing-radiation effect of semiconductor devices involves a series of physical processes inside the material:including the generation and recombination of holes, carrier transport, the formation and accumulation of oxide trap charges and interface charges. The key to understand ionizing-radiation effect is the transport mechanism of H+ and holes, which the hole transport affects the formation of oxide trap charge, annealing, and the release of H+, thus affecting the formation of interface states charge. In this paper, a physical model of the Si/SiO2 interface was established; TCAD numerical simulation is used to analyze the transport mechanism and concentration distribution of holes and H+ inside the oxide layer irradiated by different dose rate.
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