CMOS image sensor is a key electronic device in space imaging system. But its characteristics degrade under the influence of total ionizing dose (TID) effect in space, especially the dark current significantly increases. The two-dimensional simulation structure of CMOS image sensor pixel using TCAD simulation tools is builded, and the distribution of oxidetrapped charge induced by radiation is calculated base on the TID effect model and the variation of the dark current with the total dose is obtained. Through the analysis of the influence of the irradiation dose and the transmission gate (TG) voltage on the depletion region and potential distribution inside the device, the darkcurrent degradation mechanism induced by TID effect is obtained. The simulation method and the analyze results of image sensor darkcurrent degradation caused by irradiation in our paper are provide the technical support for the evaluation of radiation tolerance and the guidance for the radiation hardening design.
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