数值计算与计算机应用
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数值计算与计算机应用  2020, Vol. 41 Issue (2): 143-150    DOI:
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电离总剂量效应对4T CMOS图像传感器暗电流影响的数值仿真
魏莹, 文林, 李豫东, 郭旗
中国科学院新疆理化技术研究所, 乌鲁木齐 830011
SIMULATIONS OF THE TOTAL IONIZATION DOSE EFFECT ON 4T CMOS IMAGE SENSOR DARK CURRENT
Wei Ying, Wen Lin, Li Yudong, Guo Qi
Xinjiang Technical Institute of Physics&Chemistry, Urumqi 830011, China
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摘要 CMOS图像传感器是空间光学成像系统中的关键电子器件,但受到空间总剂量辐射效应影响其特性发生退化,特别是暗电流显著增大.本文利用TCAD仿真工具构建了4TCMOS图像传感器像素单元的二维仿真结构,利用总剂量效应模型计算了器件氧化层中辐射诱导氧化物陷阱电荷和界面态在不同累积剂量下的分布,并计算了器件暗电流随累积剂量的变化,以及传输栅对辐照暗电流的影响.通过分析辐照前后器件内部耗尽区的变化,以及传输栅偏置电压对器件电势分布的影响,获得了器件暗电流总剂量效应损伤机制.本文中电离总剂量效应的数值仿真方法和图像传感器暗电流损伤机制的分析可为评估器件抗辐射能力和设计加固提供技术支撑和指导.
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关键词CMOS图像传感器   电离总剂量辐射效应   TCAD仿真     
Abstract: CMOS image sensor is a key electronic device in space imaging system. But its characteristics degrade under the influence of total ionizing dose (TID) effect in space, especially the dark current significantly increases. The two-dimensional simulation structure of CMOS image sensor pixel using TCAD simulation tools is builded, and the distribution of oxidetrapped charge induced by radiation is calculated base on the TID effect model and the variation of the dark current with the total dose is obtained. Through the analysis of the influence of the irradiation dose and the transmission gate (TG) voltage on the depletion region and potential distribution inside the device, the darkcurrent degradation mechanism induced by TID effect is obtained. The simulation method and the analyze results of image sensor darkcurrent degradation caused by irradiation in our paper are provide the technical support for the evaluation of radiation tolerance and the guidance for the radiation hardening design.
Key wordsCMOS image sensor   total ionizing dose effect   TCAD simulation   
收稿日期: 2020-04-01;
基金资助:

中国科学院西部之光项目(批准号:2016-QNXZ-B-8);天山英才计划.

引用本文:   
. 电离总剂量效应对4T CMOS图像传感器暗电流影响的数值仿真[J]. 数值计算与计算机应用, 2020, 41(2): 143-150.
. SIMULATIONS OF THE TOTAL IONIZATION DOSE EFFECT ON 4T CMOS IMAGE SENSOR DARK CURRENT[J]. Journal on Numerical Methods and Computer Applicat, 2020, 41(2): 143-150.
 
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