数值计算与计算机应用
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数值计算与计算机应用  2020, Vol. 41 Issue (2): 121-142    DOI:
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3Ddevice:半导体器件及其辐照损伤效应仿真软件系统
黄成梓1, 白石阳1, 王芹1, 马召灿1, 张倩茹1, 刘田田1, 桂升1, 卢本卓1, 陈旻昕2, 李鸿亮3
1 LSEC, 中国科学院数学与系统科学研究院计算数学研究所, 国家数学与交叉科学中心, 北京 100190;
2 苏州大学数学科学学院, 苏州 215006;
3 四川师范大学数学科学学院, 成都 610066
3DDEVICE: A SIMULATION SOFTWARE SYSTEM FOR SEMICONDUCTOR DEVICES AND RADIATION EFFECTS
Huang Chengzi1, Bai Shiyang1, Wang Qin1, Ma Zhaocan1, Zhang Qianru1, Liu Tiantian1, Gui Sheng1, Lu Benzhuo1, Chen Minxin2, Li Hongliang3
1 LSEC, Institute of Computational Mathematics, Academy of Mathematics and Systems Science, National Center for Mathematics and Interdisciplinary Sciences, Chinese Academy of Sciences, Beijing 100190, China;
2 Department of Mathematics, Soochow University, Suzhou 215006, China;
3 Department of Mathematics, Sichuan Normal University, Chengdu 610066, China
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摘要 本文介绍我们开发的一款适用于半导体器件及其辐照损伤效应定量模拟的三维并行仿真应用软件平台3Ddevice.该软件由中国科学院数学与系统科学研究院和中国工程物理研究院微系统与太赫兹研究中心联合开发,能直接解算半导体器件的电学响应性质及其氧化物层在电离辐照下带电缺陷与界面态缺陷累积动力学过程,计算器件损伤后的电学响应偏移.我们已经实现器件电离辐照总剂量效应以及低剂量率增强效应定量模拟,模拟结果与实验数据吻合良好.软件采用C/S架构,分为本地客户端与远程计算端两大子系统.客户端由总控模块、前处理模块、通信模块以及后处理模块组成.总控模块主要的功能是求解器挂载、数值模拟流程搭建与管理.前处理模块主要功能是器件几何建模以及网格生成与优化.通信模块主要功能是求解器参数初始化与硬件系统状态监控.后处理模块主要功能是数值模拟结果可视化与数据分析.计算端基于三维并行自适应有限元平台[1](PHG)开发,目前包括半导体器件模拟器(DevSim),电离辐照损伤模拟器(TIDSim).上述求解器采用MPI通讯技术,支持大规模分布式并行,已实现十亿量级网格单元数的器件电离损伤及电学响应模拟.本文介绍的仿真软件系统是一个初级版本,将会得到持续开发更新,它的详细使用方法请参照并以软件使用说明书为准.
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关键词器件模拟   辐照损伤效应   网格生成   可视化系统   有限元     
Abstract: This work introduces a parallel software platform we developed, 3Ddevice, which is suitable for quantitative simulation of three-dimensional semiconductor devices and their radiation effects. This software is jointly developed by the Academy of Mathematics and Systems Science of the Chinese Academy of Sciences and the Microsystem and Terahertz Research Center of the China Academy of Engineering Physics. It can directly calculate the device's electrical response property and the accumulation processes of charged oxide traps and interface traps of semiconductor devices, as well as the shift of electrical response after irradiation damage. We have simulated the total dose effect of device ionizing radiation and the enhancement effect of low dose rate, and the simulation results are quantitatively in good agreement with the experimental data. The software adopts C/S architecture and is divided into two major subsystems:local client and remote computing end. The client part is composed of pre-processing, post-processor, control module and communication module. The main functions of the control module are the mounting of the solver and the construction and management of the numerical simulation process. The pre-processing module is primarily used for geometric modelling and mesh generation. The communication module can be used to initialize the parameters of solvers and monitor the hardware system status. The postprocessing module is used for analysis and visualization of the simulation results from the solver. The solver module includes two solvers (DevSim for general semiconductor device simulation based on the DD model and TIDSim for simulation of radiation effect). The solvers are developed based on the three-dimensional parallel adaptive finite element platform PHG[1]. Those solvers use MPI communication to support massive distributed parallelism and now can simulate ionization damage effect and electrical response of a device with a billion-scale mesh. The software system is going to be developed and improved continuously, the detailed and updated usage please refer to its manual.
Key wordssemiconductor device simulation   radiation effects   mesh generation   visualization system   finite element   
收稿日期: 2020-03-30;
基金资助:

科学挑战专题(TZ201603),国家重点研发计划(2016YFB0201304),NSFC(11771435).

通讯作者: 李鸿亮,Email:lihongliang@mtrc.ac.cn;卢本卓,Email:bzlu@lsec.cc.ac.cn.     E-mail: lihongliang@mtrc.ac.cn;bzlu@lsec.cc.ac.cn
引用本文:   
. 3Ddevice:半导体器件及其辐照损伤效应仿真软件系统[J]. 数值计算与计算机应用, 2020, 41(2): 121-142.
. 3DDEVICE: A SIMULATION SOFTWARE SYSTEM FOR SEMICONDUCTOR DEVICES AND RADIATION EFFECTS[J]. Journal on Numerical Methods and Computer Applicat, 2020, 41(2): 121-142.
 
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