3DDEVICE: A SIMULATION SOFTWARE SYSTEM FOR SEMICONDUCTOR DEVICES AND RADIATION EFFECTS
Huang Chengzi1, Bai Shiyang1, Wang Qin1, Ma Zhaocan1, Zhang Qianru1, Liu Tiantian1, Gui Sheng1, Lu Benzhuo1, Chen Minxin2, Li Hongliang3
1 LSEC, Institute of Computational Mathematics, Academy of Mathematics and Systems Science, National Center for Mathematics and Interdisciplinary Sciences, Chinese Academy of Sciences, Beijing 100190, China;
2 Department of Mathematics, Soochow University, Suzhou 215006, China;
3 Department of Mathematics, Sichuan Normal University, Chengdu 610066, China
This work introduces a parallel software platform we developed, 3Ddevice, which is suitable for quantitative simulation of three-dimensional semiconductor devices and their radiation effects. This software is jointly developed by the Academy of Mathematics and Systems Science of the Chinese Academy of Sciences and the Microsystem and Terahertz Research Center of the China Academy of Engineering Physics. It can directly calculate the device's electrical response property and the accumulation processes of charged oxide traps and interface traps of semiconductor devices, as well as the shift of electrical response after irradiation damage. We have simulated the total dose effect of device ionizing radiation and the enhancement effect of low dose rate, and the simulation results are quantitatively in good agreement with the experimental data. The software adopts C/S architecture and is divided into two major subsystems:local client and remote computing end. The client part is composed of pre-processing, post-processor, control module and communication module. The main functions of the control module are the mounting of the solver and the construction and management of the numerical simulation process. The pre-processing module is primarily used for geometric modelling and mesh generation. The communication module can be used to initialize the parameters of solvers and monitor the hardware system status. The postprocessing module is used for analysis and visualization of the simulation results from the solver. The solver module includes two solvers (DevSim for general semiconductor device simulation based on the DD model and TIDSim for simulation of radiation effect). The solvers are developed based on the three-dimensional parallel adaptive finite element platform PHG. Those solvers use MPI communication to support massive distributed parallelism and now can simulate ionization damage effect and electrical response of a device with a billion-scale mesh. The software system is going to be developed and improved continuously, the detailed and updated usage please refer to its manual.
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