RESEARCH ON PARALLEL FINITE ELEMENT METHODS FOR THE DRIFT-DIFFUSION MODEL IN SEMICONDUCTOR DEVICE SIMULATIONS
Wang Qin1,2, Ma Zhaocan1,2, Bai Shiyang1,2, Zhang Linbo1,2, Lu Benzhuo1,2, Li Hongliang3
1 LSEC, NCMIS, Institute of Computational Mathematics and Scientific/Engineering Computing, Academy of Mathematics and Systems Science, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Mathematical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Department of Mathematics, Sichuan Normal University, Chengdu 610066, China
In this paper, we propose a novel 3D adaptive upwind stabilized finite element method (SUPG-IP), and perform a study to compare several parallel finite element methods for semiconductor device simulations. Numerical results show that the stabilized finite element methods are applicable to problems with large biases and high doping concentrations, while the classic Zlamal finite element method is more suitable for calculation of electrical characteristics of devices. Based on the three-dimensional parallel adaptive finite element toolbox PHG, a Drift-Diffusion model solver, DevSim, for semiconductor device simulations is developed. It is applied to simulating several typical semiconductor devices. The results are consistent with those of the commercial software Sentaurus, which verifies the effectiveness of the algorithms. A large-scale numerical experiment of PN diode, with 800 million elements and 2048 MPI processes, was carried out, demonstrating good parallel scalability of the algorithms.
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